IB2729M90

High Power S-Band Transistor Supplying 90W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
2.9
90
10
51
100µs, 10%
36
Input & Output
P32A5
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IB2729M90 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 90 W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

Silicon Bipolar

Matched to 50-ohms

90W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99