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IB2731M110 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.7 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 110 W of peak pulse power under the conditions of 200µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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