IB2731MH110 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.7 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 110W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.