IB2731MH110
High Power S-Band Transistor Supplying 110W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
2.7 | 3.1 | 110 | 9 | 45 | 200µs, 10% | 36 | Input & Output | P44C4 |
IB2731MH110 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.7 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 110W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
