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IB2856S250
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IB2856S250 | 2.856 | 2.856 | 250 | 11 | 52 | 12µs, 3% | 40 | Input & Output | P32A5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.856
2.856
250
11
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
52
12µs, 3%
40
Input & Output
IB2856S250 is a high power pulsed transistor designed to operate in Class C mode in ISM/Medical systems. This common base device supplies a minimum of 250W of peak pulse power under the conditions of 12µs pulse width and 3% duty cycle. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. All devices are 100% screened for large signal RF parameters.
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