IB2931MH155

High Power S-Band Transistor Supplying 155W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.9
3.1
155
9
42
100µs, 10%
36
Input & Output
P44C4
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IB2931MH155 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.9 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 155 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

Silicon Bipolar

Matched to 50-ohms

155W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99