IB2931MH155 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.9 - 3.1 GHz. While operating in Class C mode this common base device supplies a minimum of 155 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle over the frequency range. All devices are 100% screened for large signal RF parameters, including power gain compression.