top of page

IB2934M100

High Power S-Band Transistor Supplying 130W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.9
3.4
100
8
40
100µs, 10%
36
Input & Output
P32A5
ign0160um12.jpeg

IB2934M100 is a high power pulsed transistor device part number is designed for S-band radar systems operating over the instantaneous bandwidth of 2.9 - 3.4 GHz. While operating in Class C mode this common base device supplies a minimum of 100W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon Bipolar

Matched to 50-ohms

100W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99

bottom of page