IB3134M100

High Power S-Band Transistor Supplying 100W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
3.1
3.4
100
10
42
300µs, 10%
36
Input & Output
P32A5
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IB3134M100 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.4 GHz. While operating in Class C mode this common base device supplies a minimum of 100 W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

Silicon Bipolar

Matched to 50-ohms

100W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99