IB3135MH75
High Power S-Band Transistor Supplying 75W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
3.1 | 3.5 | 75 | 9 | 49 | 100µs, 10% | 36 | Input & Output | P44C4 |
IB3135MH75 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.5 GHz. While operating in Class C mode this common base device supplies a minimum of 75 W of peak pulse power under the conditions of 150us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
