IDM165L650
High Power VDMOS Transistor Operating at 650W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.125 | 0.167 | 650 | 9 | 62 | 1ms, 20% | 34 | None | P44I1 |
IDM165L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.125 - 0.167 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 80W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
