IDM165L650

High Power VDMOS Transistor Operating at 650W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.125
0.167
650
9
62
1ms, 20%
34
None
P44I1
ign0160um12.jpeg

IDM165L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.125 - 0.167 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 80W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

FEATURES

Silicon VDMOS

Matched to 50-ohms

650W Output Power

100% High Power RF Tested

Class C Operation

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99