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IDM175CW300
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IDM175CW300 | 0.001 | 0.2 | 300 | 15 | 57 | CW | 50 | None | P44I5 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.001
0.2
300
15
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
57
CW
50
None
IDM175CW300 is a high power silicon transistor designed for Sub-1 GHz systems operating at 0.001 - 0.2 GHz. Operating at CW conditions, this device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
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