top of page

IDM175CW300

High Power VDMOS Transistor Operating at 300W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.001
0.2
300
15
57
CW
50
None
P44I5
ign0160um12.jpeg

IDM175CW300 is a high power silicon transistor designed for Sub-1 GHz systems operating at 0.001 - 0.2 GHz. Operating at CW conditions, this device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon VDMOS

Matched to 50-ohms

300W Output Power

100% High Power RF Tested

CW Conditions

​

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

bottom of page