IDM175CW300
High Power VDMOS Transistor Operating at 300W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
0.001 | 0.2 | 300 | 15 | 57 | CW | 50 | None | P44I5 |
IDM175CW300 is a high power silicon transistor designed for Sub-1 GHz systems operating at 0.001 - 0.2 GHz. Operating at CW conditions, this device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
