IDM265L650

High Power VDMOS Sub-1 GHz Transistor Operating at 650W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.19
0.265
650
8
58
1ms, 20%
34
None
P44C5 x2
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IDM265L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.19 - 0.265 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 110W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

FEATURES

Silicon VDMOS

Matched to 50-ohms

650W Output Power

100% High Power RF Tested

Class B Operation

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99