top of page

IDM30512CW100

High Power VDMOS Transistor Operating at 100W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.03
0.512
100
9
65
CW
28
None
P44I1
ign0160um12.jpeg

IDM30512CW100 is a high power transistor designed for Sub-1 GHz systems operating over the frequency band 0.03 - 0.512 GHz under CW conditions. This dual MOSFET device is capable of supplying a minimum of 100W of output power. All devices are 100% screened in a narrowband RF test fixture.

FEATURES

Silicon VDMOS

Matched to 50-ohms

100W Output Power

100% High Power RF Tested

CW Conditions

​

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

bottom of page