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IDM30512CW50

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IDM30512CW50
0.03
0.512
50
10
50
CW
28
None
P44I1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.03
0.512
50
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
50
CW
28
None

IDM30512CW50 is a high power transistor designed for Sub-1 GHz systems operating over the frequency band 0.03 - 0.512 GHz, under CW conditions. This dual MOSFET device is capable of supplying a minimum of 50W of output power. All devices are 100% screened in a narrowband RF test fixture.

FEATURES

Silicon VDMOS

Matched to 50-ohms

50W Output Power

100% High Power RF Tested

CW Conditions

APPLICATION

Sub-1 GHz Technology

EXPORT STATUS

EAR99

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