ILD0912M150HV

High Power LDMOS Transistor Operating at 150W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
150
13
55
10µs, 10%
50
Input & Output
PL84A1
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ILD0912M150HV is a high power LDMOS transistor designed for avionics systems operating at 0.960 - 1.215 GHz. Operating at 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

150W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99