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ILD0912M400HV

High Power LDMOS Transistor Operating at 400W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
400
9
46
10µs, 10%
50
Input & Output
PL95A1
ign0160um12.jpeg

ILD0912M400HV is a high power LDMOS transistor part number is designed for avionics systems operating at 0.960 - 1.215 GHz. Operating at 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 400 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

400W Output Power

100% High Power RF Tested

Class AB Operation

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APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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