ILD1011L200HV

High Power L-Band Transistor Supplying 200W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
200
17
55
48x (32µs On, 18µs Off), 6.4%
50
Input
PL64A1
ign0160um12.jpeg

ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

200W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99