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ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
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