ILD1011L950HV

LDMOS Transistor For L-Band Avionics Operating at 950W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
950
16
55
48x (32µs On, 18µs Off), 6.4%
50
Input
PL124A1
ign0160um12.jpeg

ILD1011L950HV is a high power LDMOS transistor, designed for L-band avionics systems, operating at 1.03 GHz. While operating in Class AB mode under ELM Mode S, 6.4%, at VCC = 50V, this device supplies a minimum of 950W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability and is 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS Technology

Pre-Matched Device

950W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99