ILD1011M1000HVE

LDMOS Transistor For L-Band Avionics Operating at 1000W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
1000
18
55
50µs, 2%
50
Input
PL124A1
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ILD1011M1000HVE is a high power LDMOS transistor, designed for L-band avionics systems, operating at 1.03 GHz. While operating in Class AB mode under 50us, 2%, at VCC = 50V, this device supplies a minimum of 1000W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability and is 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS Technology

Pre-Matched Device

1000W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99