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ILD1011M1000HVE
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1011M1000HVE | 1.03 | 1.09 | 1000 | 18 | 55 | 50µs, 2% | 50 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
1000
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
50µs, 2%
50
Input
ILD1011M1000HVE is a high power LDMOS transistor, designed for L-band avionics systems, operating at 1.03 GHz. While operating in Class AB mode under 50us, 2%, at VCC = 50V, this device supplies a minimum of 1000W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability and is 100% screened for large signal RF parameters.
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