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ILD1011M160HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1011M160HV | 1.03 | 1.09 | 160 | 17 | 53 | 50µs, 2% | 50 | Input | PL32A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.09
160
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
53
50µs, 2%
50
Input
ILD1011M160HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 160W of power and is 100% screened for large signal RF parameters.
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