ILD1011M160HV
High Power LDMOS Transistor Operating at 160W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.09 | 160 | 17 | 53 | 50µs, 2% | 50 | Input | PL32A1 |
ILD1011M160HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 160W of power and is 100% screened for large signal RF parameters.
