ILD1011M160HV

High Power LDMOS Transistor Operating at 160W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.03
160
17
53
50µs, 2%
50
Input
PL32A1
ign0160um12.jpeg

ILD1011M160HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 160W of power and is 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS Technology

Pre-Matched Device

160W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

Avionics

EXPORT STATUS

EAR99