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ILD1011M275HV

High Power L-Band Transistor Supplying 275W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.03
1.09
275
15
53
50µs, 2%
50
Input & Output
PL84A1
ign0160um12.jpeg

ILD1011M275HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 275W of power. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

275W Output Power

100% High Power RF Tested

Class AB Operation

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APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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