ILD1011M550HV
High Power L-Band Transistor Supplying 550W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.03 | 1.09 | 550 | 17 | 49 | 50µs, 2% | 50 | Input & Output | PL84A1 |
ILD1011M550HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
