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ILD1012S500HV
High Power LDMOS Transistor Operating at 500W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.025 | 1.15 | 500 | 16 | 49 | 10µs, 1% | 50 | Input & Output | PL84A1 |
ILD1012S500HV is a high power LDMOS transistor designed for avionics DME systems operating at 1.025 - 1.150 GHz. Operating at 10µs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
FEATURES
Silicon LDMOS FET
Matched to 50-ohms
500W Output Power
100% High Power RF Tested
Class AB Operation
APPLICATION
L-Band Avionics
EXPORT STATUS
EAR99
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