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ILD1012S500HV

High Power LDMOS Transistor Operating at 500W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.025
1.15
500
16
49
10µs, 1%
50
Input & Output
PL84A1
ign0160um12.jpeg

ILD1012S500HV is a high power LDMOS transistor designed for avionics DME systems operating at 1.025 - 1.150 GHz. Operating at 10µs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

500W Output Power

100% High Power RF Tested

Class AB Operation

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APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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