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ILD1214EL200
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1214EL200 | 1.2 | 1.4 | 200 | 12 | 42 | 16ms, 50% | 30 | Input & Output | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
200
12
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
42
16ms, 50%
30
Input & Output
ILD1214EL200 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.215 - 1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters.
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