ILD1214EL40

High Power L-Band Transistor Supplying 40W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
40
14
42
16ms, 50%
30
Input
PL32A1
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ILD1214EL40 is a high power LDMOS transistor designed for L-band radar applications operating over the 1.215 - 1.400 GHz instantaneous frequency band. Under 5ms/20% pulsing conditions it easily supplies a minimum of 40 W of peak output power with over 12db gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

40W Output Power

100% High Power RF Tested

Class AB or B Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99