ILD1214EL40
High Power L-Band Transistor Supplying 40W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 40 | 14 | 42 | 16ms, 50% | 30 | Input | PL32A1 |
ILD1214EL40 is a high power LDMOS transistor designed for L-band radar applications operating over the 1.215 - 1.400 GHz instantaneous frequency band. Under 5ms/20% pulsing conditions it easily supplies a minimum of 40 W of peak output power with over 12db gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
