ILD1214L250

High Power L-Band Transistor Supplying 250W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
250
13
60
1ms, 10%
30
Input & Output
PL124A1
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ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

250W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99