ILD1214L250
High Power L-Band Transistor Supplying 250W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 250 | 13 | 60 | 1ms, 10% | 30 | Input & Output | PL124A1 |
ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
