ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1μs with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.