ILD1214M10

High Power L-Band Transistor Supplying 10W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
10
13
48
200µs, 10%
30
Output
PL32A1
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ILD1214M10 is a high power LDMOS transistor designed for L-band radar operating at 1.20 - 1.40 GHz. This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15W of peak pulse power. All devices are 100% screened for large signal parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

10W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

L-Band Radar

EXPORT STATUS

EAR99