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ILD1214M10
High Power L-Band Transistor Supplying 10W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 10 | 13 | 48 | 200µs, 10% | 30 | Output | PL32A1 |
ILD1214M10 is a high power LDMOS transistor designed for L-band radar operating at 1.20 - 1.40 GHz. This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15W of peak pulse power. All devices are 100% screened for large signal parameters.
FEATURES
Silicon LDMOS FET
Matched to 50-ohms
10W Output Power
100% High Power RF Tested
Class AB Operation
APPLICATION
L-Band Radar
EXPORT STATUS
EAR99
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