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ILD1214M10
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD1214M10 | 1.2 | 1.4 | 10 | 13 | 48 | 200µs, 10% | 30 | Output | PL32A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
10
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
48
200µs, 10%
30
Output
ILD1214M10 is a high power LDMOS transistor designed for L-band radar operating at 1.20 - 1.40 GHz. This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15W of peak pulse power. All devices are 100% screened for large signal parameters.
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