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ILD2731M140

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
ILD2731M140
2.7
3.1
140
13
45
300µs, 10%
32
Input & Output
PL64A1
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
140
13
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
45
300µs, 10%
32
Input & Output

ILD2731M140 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 140 W of peak output power. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

140W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99

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