ILD2731M30

High Power S-Band Transistor Supplying 30W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
3.1
30
13
46
100µs, 10%
28
Input & Output
PL32A1
ign0160um12.jpeg

ILD2731M30 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30W of peak output power with well over 10dB gain. Since it operates under Class B or AB bias it exhibits a fairly linear Pin versus Pout transfer characteristic, which allows operation at reduced output power levels. With appropriate rating, it is operable under nearly any pulse width and duty factor condition. It operates with spectral purity into output VSWR with simultaneous input power overdrive. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

30W Output Power

100% High Power RF Tested

Class AB or B Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99