ILD2731M60

High Power S-Band Transistor Supplying 30W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
3.1
60
11
43
300µs, 10%
32
Input & Output
PL32A1
ign0160um12.jpeg

ILD2731M60 is high power LDMOS transistor designed for S-band radar applicaitons operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us/20% pulsing conditions, it easily supplies a minimum of 60W of peak output power with 32V drain bias. Specified operation is with Class AB bias. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

60W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99