ILD2735M120
High Power S-Band Transistor Supplying 120W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
2.7 | 3.5 | 120 | 10 | 33 | 300µs, 10% | 32 | Input & Output | PL124A1 |
ILD2735M120 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 120 W of peak output power. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
