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ILD2735M120
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD2735M120 | 2.7 | 3.5 | 120 | 10 | 33 | 300µs, 10% | 32 | Input & Output | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.5
120
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
33
300µs, 10%
32
Input & Output
ILD2735M120 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 120 W of peak output power. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
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