ILD2933M130

High Power S-Band Transistor Supplying 130W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.9
3.3
130
11
45
300µs, 10%
32
Input & Output
PL84A1
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ILD2933M130 is a high power LDMOS transistor designed for S-band radar applications operating over the 2.9 - 3.3 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 130 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

130W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99