ILD3135EL20
High Power S-Band Transistor Supplying 20W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
3.1 | 3.5 | 20 | 10 | 35 | 16ms, 50% | 28 | Input & Output | PL32A1 |
ILD3135EL20 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 16ms / 50% pulsing conditions it supplies a minimum of 20 W (typically 25-30W) of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The device also may be operated with Class A or B bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
