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ILD3135EL20
Model  | Min Frequency (GHz)  | Max Frequency (GHz)  | Min Output Power (W)  | Typ Gain (dB)  | Typ Efficiency (%)  | Pulse Width & Duty Factor  | Voltage (V)  | Matching  | Package  | 
|---|---|---|---|---|---|---|---|---|---|
ILD3135EL20  | 3.1  | 3.5  | 20  | 10  | 35  | 16μs, 50%  | 28  | Input & Output  | PL32A1  | 
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
3.1
3.5
20
10
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
35
16μs, 50%
28
Input & Output

ILD3135EL20 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 16μs / 50% pulsing conditions it supplies a minimum of 20 W (typically 25-30W) of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The device also may be operated with Class A or B bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
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