ILD3135M120

High Power S-Band Transistor Supplying 120W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
3.1
3.5
120
10
41
300µs, 10%
32
Input & Output
PL84A1
ign0160um12.jpeg

ILD3135M120 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 W of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

120W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

3A001