ILD3135M180
High Power S-Band Transistor Supplying 180W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
3.1 | 3.5 | 180 | 12 | 37 | 300µs, 10% | 32 | Input & Output | PL124A2 |
ILD3135M180 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 180 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The single-ended broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
