ILD3135M180

High Power S-Band Transistor Supplying 180W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
3.1
3.5
180
12
37
300µs, 10%
32
Input & Output
PL124A2
ign0160um12.jpeg

ILD3135M180 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 180 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The single-ended broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

180W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

3A001