ILD3135M30

High Power S-Band Transistor Supplying 30W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
3.1
3.5
30
10
40
300µs, 10%
32
Input & Output
PL32A1
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ILD3135M30 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 30 W of peak output power with 10dB gain typically. Specified operation is with Class AB bias. The device also may be operated with Class A or B bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

30W Output Power

100% High Power RF Tested

Class AB Operation

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99