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IGN0105M135
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN0105M135 | 0.1 | 0.46 | 135 | 20.5 | 55 | 100µs, 10% | 100 | Input | PL32C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.1
0.46
135
20.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
100µs, 10%
100
Input
IGN0105M135 is a high power GaN-on-SiC push-pull RF power transistor that has been designed to suit the unique needs of P band radar systems. It operates over the full 100-460 MHz frequency range. Under 100µs, 10% duty cycle pulse conditions, it supplies a minimum of 135 W of peak output power, with typically 20.5 dB of gain and 55% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with thermal enhancement and uses an epoxy-sealed ceramic lid.
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