IGN0450M2500 and IGN0450M2500S are high power GaN-on- SiC RF power transistors that have been designed to suit the unique needs of P band radar systems. They operate over the full 420-450 MHz frequency range. Under 300µs, 2% duty cycle pulse conditions, they supply a minimum of 2.5 kW of peak output power, with typically 18 dB of gain and 78% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.