IGN0912M2500 and IGN0912M2500S are high power GaN-on SiC RF power transistors that have been designed to suit the unique needs of TACAN systems. Under 24 x (3.5µs on, 11µs off), LTDC =1.1% duty cycle pulse conditions, they supply a minimum of 2500 W of peak output power, with typically > 17dB of associated gain and 70% efficiency. They operate from a 125V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.