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IGN1214M100HV
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M100HV | 1.2 | 1.4 | 100 | 17.5 | 55 | 300µs, 4% | 100 | Input | PL32C2 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
100
17.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
300µs, 4%
100
Input
IGN1214M100HV and IGN1214M100HVS are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 100W of peak output power, with typically 17.5dB of associated gain and 55% efficiency. They operate from a 100V supply voltage.
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