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IGN1214M1600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M1600 | 1.2 | 1.4 | 1600 | 17 | 70 | 100µs, 10% | 100 | Input | PL84A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
1600
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
100µs, 10%
100
Input
IGN1214M1600 and IGN1214M1600S are high power GaN-onSiC RF power transistors that have been designed to suit the unique needs of modern long-range radar systems. They supply a minimum of 1600 W of peak output power, with typically >17 dB of associated gain and 65% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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