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IGN1214M3200
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M3200 | 1.2 | 1.4 | 3200 | 18 | 68 | 100µs, 4% | 100 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
3200
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
68
100µs, 4%
100
Input
IGN1214M3200 and IGN1214M3200S are high power GaN-on- SiC RF power transistors that have been designed to suit the unique needs of modern long-range radar systems. They supply a minimum of 3200 W of peak output power, with typically >18 dB of associated gain and 68% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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