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IGN1300S3600
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1300S3600 | 1.3 | 1.3 | 3600 | 18 | 70 | 10µs, 1% | 100 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.3
1.3
3600
18
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
10µs, 1%
100
Input
IGN1300S3600 is a high power GaN-on-SiC RF power transistor. It operates at 1.3 GHz. Under 10µs, 1% duty cycle pulse conditions it supplies a minimum of 3600 W of peak output power, with typically 18 dB of gain and 70% efficiency. It operates from a 100 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
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