GN2729M200HV and IGN2729M200HVS are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of S band radar systems. They operate over the complete 2.7 - 2.9 GHz frequency range. Under 100µs, 10% duty cycle pulse conditions, they supply a minimum of 200 W of peak output power. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.