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IGN2931M800
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2931M800 | 2.9 | 3.1 | 800 | 14 | 48 | 300µs, 15% | 80 | Input | PL64B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.9
3.1
800
14
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
48
300µs, 15%
80
Input
IGN2931M800 and IGN2931M800S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply a minimum of 800W of peak output power, with typically 14dB of gain and 48% efficiency. They operate from a 80V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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