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IGNP1030S5000

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGNP1030S5000
1.03
1.03
5000
19
73
32µs, 4%
125
Input & Output
Pallet
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
5000
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
73
32µs, 4%
125
Input & Output

IGNP1030S5000 is a high power GaN/SiC RF power module that has been designed to suit the unique needs of IFF/SSR avion­ics systems. Under 32µs, 4% duty cycle pulse conditions, it typical­ly supplies 5000 W of peak output power, with 18.5dB of associat­ed gain and 68% efficiency. It operates from a 125 V supply voltage.

FEATURES

GaN on SiC HEMT Technology

Output Power >5000 W

High Efficiency - up to 73% during the RF pulse

100% RF Tested

REACH Compliant

APPLICATION

L-band Avionics IFF & SSR Systems

EXPORT STATUS

EAR99

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