top of page
IGNP1214M1600
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
1600
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
70
100 µs, 10%
100
Input & Output
Model | Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGNP1214M1600 | 1.2 | 1.4 | 1600 | 17 | 70 | 100 µs, 10% | 100 | Input & Output | 5.4" x 2.0" |
IGNP1214M1600 is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of modern long-range radar systems. It supplies a minimum of 1600 W of peak output power, with typically >17 dB of associated gain and 65% efficiency. It operates from a 100 V supply voltage.
FEATURES
GaN on SiC HEMT Technology
Output Power >1600 W
High Efficiency - up to 70%
100% RF Tested Under 100µs, 10% duty cycle pulse conditions
APPLICATION
L-band Radar Systems
EXPORT STATUS
EAR99
bottom of page