ILT3035M30
Si-LDMOS Transistor for S-Band Radar Operating at 3.0-3.5 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching (Ohm) | Package |
---|---|---|---|---|---|---|---|---|
3 | 3.5 | 30 | 12 | 45 | 300µs, 10% | 32 | 50 | PL32A2 |

ILT3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration.
FEATURES
Si-LDMOS FET Technology
30W Output Power
Fully matched internal impedance
100% High Power RF Tested
Class AB Operation
Negative Gate Voltage/Bias Sequencing
APPLICATION
S-band Radar Systems
EXPORT STATUS
EAR99
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