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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.2
1.4
900
15.5
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
300µs, 10%
50
Input
IGN1214M900
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1214M900 | 1.2 | 1.4 | 900 | 15.5 | 60 | 300µs, 10% | 50 | Input | PL64B1 |
IGN1214M900 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 900W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >900W
Exceptionally High Efficiency - up to 63%
Pre-matched Input Impedance
100% RF Tested Under 300µs, 10% duty cycle pulse conditions
RoHS and REACH Compliant
IGN1214M900 has a bolt-down flange, IGN1214M900S is the earless flange option
APPLICATION
L-band Radar Systems
EXPORT STATUS
EAR99
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