IGN1214M900

L-Band Radar Transistor Offers 900W

Min Freq (GHz)	Max Freq (GHz)	Min Output Power (W)	Typ Gain (dB)	Typ Efficiency (%)	Pulse Width & Duty Factor	Voltage (V)	Matching	Package
1.2	1.4	900	15.5	60	300µs, 10%	50	Input	PL64B1

IGN1214M900 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 900W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >900W

Exceptionally High Efficiency - up to 63%

Pre-matched Input Impedance

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

IGN1214M900 has a bolt-down flange, IGN1214M900S is the earless flange option

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99