IGN1214M900

L-Band Radar Transistor Offers 900W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
900
15.5
60
300µs, 10%
50
Input
PL64B1
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IGN1214M900 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 900W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

Output Power >900W

Exceptionally High Efficiency - up to 63%

Pre-matched Input Impedance

100% RF Tested Under 300µs, 10% duty cycle pulse conditions

RoHS and REACH Compliant

IGN1214M900 has a bolt-down flange, IGN1214M900S is the earless flange option

APPLICATION

L-band Radar Systems

EXPORT STATUS

EAR99