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IGN1214M900 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 900W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
Output Power >900W
Exceptionally High Efficiency - up to 63%
Pre-matched Input Impedance
100% RF Tested Under 300µs, 10% duty cycle pulse conditions
RoHS and REACH Compliant
IGN1214M900 has a bolt-down flange, IGN1214M900S is the earless flange option
APPLICATION
L-band Radar Systems
EXPORT STATUS
EAR99
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