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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.856
2.856
40
17.8
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
12µs, 3%
50
Input

IGN2856S40

Model
Min Frequency (GHz)
Max Frequency (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
IGN2856S40
2.856
2.856
40
17.8
60
12µs, 3%
50
Input
PL32A2

IGN2856S40 is a high power pulsed transistor, specified for use under Class AB operation. This transistor offers 2.856 GHz of operating frequency, minimum of 40W of peak pulse power, 50V and 3% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

40W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band

EXPORT STATUS

EAR99

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