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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.856
2.856
500
11.8
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
60
12µs, 3%
50
Input & Output
IGN2856S500
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2856S500 | 2.856 | 2.856 | 500 | 11.8 | 60 | 12µs, 3% | 50 | Input & Output | PL64A1 |
IGN2856S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.856 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 3% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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